THESIS FOR THE DEGREE OF LICENTIATE OF ENGINEERING GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design
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Design of an Oscillator with Low Phase Noise and Medium Output Power in a 0.25 μm GaN-on-SiC HEMT Technology
To investigate the effects of both the drain and gate bias voltages on the performance of GaN HEMT oscillator, a 0.25 μm GaN-on-SiC HEMT oscillator is presented in this paper. Utilizing the designed oscillator, the trade-off between phase noise and output power is effectively investigated at the circuit level. As a result, the designed oscillator can provide low phase noise and medium output po...
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